HongKong Double Light Electronics Technology Co. Ltd


Profesjonalny producent diod LED z Chin
Ponad 10 lat doświadczenia w produkcji LED
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Dom ProduktyDioda emitująca podczerwień

1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

    • 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm
    • 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm
    • 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm
  • 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

    Szczegóły Produktu:

    Place of Origin: China (mainland)
    Nazwa handlowa: Double Light
    Orzecznictwo: ISO9001:2008,ROHS
    Model Number: DL-R18SIRC-1SIR

    Zapłata:

    Minimum Order Quantity: 10,000pcs
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
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    Szczegółowy opis produktu
    Product Name: Infrared LEDs Diameter: LED Infrared Chip
    Emitted Color: Infrared LED Peak Emission Wavelength: 850nm
    Chip Material: GaAlAs Lens Type: Water Clear
    Forward Voltage @20ma: 1.1-1.4V Viewing Angle: 10 Deg

    1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

     

    Subminiature Axial Infrared Emitting Diode 

    1. Package in 12mm tape on 7" diameter reels.
      ◇ Small double-end package.
      ◇ EIA Std. package.
      ◇ High reliability.
      ◇ Low forward voltage.
      ◇ Compatible with automatic placement equipment.
      ◇ The product itself will remain within RoHS compliant version.
      ◇ The device is an infrared emitting diode in miniature SMD package which is molded in water clear plastic.
      ◇ The device is much smaller than leaded components. Thus enable smaller board size. Higher packing density. Reduced storage space and finally smaller equipment to be obtained.
      ◇ The device is specially matched with photodiode, phototransistor and infrared receiver module.
      ◇ PCB mounted infrared sensor.
      ◇ Infrared emitting for miniature light barrier.
      ◇ Floppy disk drive.
      ◇ Optoelectronic switch.
      ◇ Smoke detector.

     

     

    1. Absolute Maximum Ratings at Ta=25℃

      Parameters Symbol Max. Unit
      Power Dissipation PD 100 mW

      Peak Forward Current

      (1/10 Duty Cycle, 0.1ms Pulse Width)

      IFP 1.00 A
      Continuous Forward Current IF 50 mA
      Reverse Voltage VR 5 V
      Operating Temperature Range Topr -40℃ to +80℃
      Storage Temperature Range Tstg -40℃ to +85℃
      Soldering Temperature Tsld 260℃ for 5 Seconds
       

      Electrical Optical Characteristics at Ta=25℃

      Parameters Symbol Min. Typ. Max. Unit Test Condition
      Radiant Intensity (Note 1) * Ee --- 2.70 --- mW/sr IF=20mA
      Viewing Angle (Note 2) * 2θ1/2 --- 25 --- Deg IF=20mA
      Peak Emission Wavelength λp --- 850 --- nm IF=20mA
      Spectral Bandwidth △λ --- 45 --- nm IF=20mA
      Forward Voltage VF --- 1.40 1.90 V IF=20mA
      Reverse Current IR --- --- 10 µA VR=5V
       

       

      Notes:

      1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

      2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

     

    Infrared Emitting Diode Package Dimension:

    1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm 

     
     

    Szczegóły kontaktu
    HongKong Double Light Electronics Technology Co. Ltd

    Osoba kontaktowa: Mr. Rony Qiu

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