HongKong Double Light Electronics Technology Co. Ltd


Profesjonalny producent diod LED z Chin
Ponad 10 lat doświadczenia w produkcji LED
Odpowiednia dostawa, całkowicie gwarantowana jakość

Dom
Produkty
O nas
Wycieczka po fabryce
Kontrola jakości
Skontaktuj się z nami
Poprosić o wycenę
Dom ProduktyDioda emitująca podczerwień

Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter

Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter

    • Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter
    • Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter
  • Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter

    Szczegóły Produktu:

    Place of Origin: China
    Nazwa handlowa: Double Light
    Orzecznictwo: ISO9001:2008,Rosh
    Model Number: DL-PC817IR

    Zapłata:

    Minimum Order Quantity: 1000 PCS
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
    Skontaktuj się teraz
    Szczegółowy opis produktu
    Type: Infrared LED Emitting Diodes Max. Reverse Voltage: 5V
    Light color: Infrared Color Temperature: 940nm
    Led Chips: Epistar led diodes Forward Voltage: 1.0-1.4V

    Opto Interrupter Cut - off visible wavelength 940nm Infrared Emitting Diode / ir led diode
     
    Opto Interrupter Technical Data Sheet

     

    Features:

    1. PWB mounting type package.
    2. High sensing accuracy.
    3. Wide gap between light emitter and detector (5.00mm).
    4. Cut-off visible wavelength λP=940nm.
    5. The product itself will remain within RoHS compliant Version.


    Descriptions:

    1. The ITR817 (Slot Optical Switch) is a gallium arsenide infrared emitting diode which is coupled with a silicon phototransistor in a plastic housing.
    2. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, and insulates ambient light.
    3. The slot in the housing a provides a means of interrupting the signal with printer, scanner, copier, or other opaque material, switching the output from an “ON” to “OFF” state.


    Applications:

    1. Copier.
    2. Printer.
    3. Facsimile.
    4. Ticket vending machine.
    5. Opto-electronic switch.
    6. Switch scanner.
    7. Non-contact switching.
    Part No. Material Color Source Color
    DL-ITR9606 Chip GaAlAs --- Infrared
    Silicon --- Infrared Receiver
    Lead Frame SPCC Silver White ---
    Wire Gold Golden ---
    Compound Epoxy Water Clear Infrared
    Black Infrared Receiver
    Holder PPO Black ---

     

     

     

     

     

     

     

     

     

     

     

    Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Ratings Unit
    Input Power Dissipation at (or below) 25℃ Free Air Temperature PD 75 mW
    Reverse Voltage VR 5 V
    Forward Current IF 50 mA

    Peak Forward Current (*1)

    Pulse width ≦100μs, Duty cycle=1%

    IFP 1.00 A
    Output Collector Power Dissipation PC 75 mW
    Collector Current IC 20 mA
    Collector-Emitter Voltage BVCEO 30 V
    Emitter-Collector Voltage BVECO 5 V
    Operating Temperature Topr 25~+85
    Storage Temperature Tstg 40~+85

    Lead Soldering Temperature (*2)

    [2mm (.079″) From Body]

    Tsol 260℃ for 5 Seconds
     

    (*1) tw=100μsec., T=10msec. (*2) t=5Secs.

    Electrical Optical Characteristics (Ta=25℃)

    Parameters Symbol Min. Typ. Max. Unit Test condition
    Input Forward Voltage VF1 --- 1.20 1.50 V IF=20mA
    VF2 --- 1.40 1.85 IF=100mA, tp=100μs, tp/T=0.01
    VF3 --- 2.60 4.00 IF=1A, tp=100μs, tp/T=0.01
    Reverse Current IR --- --- 10 µA VR=5V
    Peak Wavelength λp --- 940 --- nm IF=20mA
    Viewing Angle 2θ1/2 --- 60 --- Deg IF=20mA
    Output Collector Dark Current ICEO --- --- 100 nA VCE=20V, Ee=0mW/cm²
    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=2mA,

    Ee=1mW/cm²

    On State Collector Current

    (*3)

    IC(ON) 0.50 --- --- mA

    VCE=5V,

    IF=20mA

    Response

    Time

    Rise Time

    (10% to 90%)

    TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Fall Time

    (90% to 10%)

    TF --- 15 ---
     

     

    Infrared LED Emitting Diodes Package Dimension:

    Cut - off visible 940nm Infrared Emitting Diode / ir led diode Opto Interrupter

    Szczegóły kontaktu
    HongKong Double Light Electronics Technology Co. Ltd

    Osoba kontaktowa: Mr. Rony Qiu

    Wyślij zapytanie bezpośrednio do nas (0 / 3000)

    Inne produkty